Physical characterization of sub-32-nm semiconductor materials and processes using advanced ion beam-based analytical techniques
- M. Hopstaken
- D. Pfeiffer
- et al.
- 2012
- Surface and Interface Analysis
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194 results for Vijay Narayanan
Epitaxial strontium oxide layers on silicon for gate-first and gate-last TiN/HfO2 gate stack scaling
- Martin M. Frank
- Chiara Marchiori
- et al.
- 2011
- Microelectronic Engineering
High temperature (1000°C) compatible Y-La-Si-O silicate gate dielectric in direct contact with Si with 7.7 Å equivalent oxide thickness
- Catherine Dubourdieu
- E. Cartier
- et al.
- 2011
- Applied Physics Letters
Millisecond flash annealing as a flatband voltage shift enabler for p-type metal-oxide-semiconductor devices with high-k/metal gate
- Changhwan Choi
- Vijay Narayanan
- 2011
- Electrochemical and Solid-State Letters
Impact of diffusionless anneal using dynamic surface anneal on the electrical properties of a high-k/metal gate stack in metal-oxide-semiconductor devices
- Changhwan Choi
- Kam-Leung Lee
- et al.
- 2011
- Applied Physics Letters
Ruthenium based metals using atomic vapor deposition for gate electrode applications
- Changhwan Choi
- Takashi Ando
- et al.
- 2011
- Applied Physics Letters
Epitaxial SrO interfacial layers for HfO2 -Si gate stack scaling
- Chiara Marchiori
- Martin M. Frank
- et al.
- 2011
- Applied Physics Letters
Physical origins of mobility degradation in extremely scaled SiO 2 / HfO2 gate stacks with la and Al induced dipoles
- Takashi Ando
- Matt Copel
- et al.
- 2010
- Applied Physics Letters
Temperature-dependent La- and Al-induced dipole behavior monitored by femtosecond pump/probe photoelectron spectroscopy
- Hiroaki Arimura
- Richard Haight
- et al.
- 2010
- Applied Physics Letters
Oxygen migration in TiO2-based higher-k gate stacks
- Sangbum Kim
- Stephen L. Brown
- et al.
- 2010
- Journal of Applied Physics