Gate-Cut-Last in RMG to Enable Gate Extension Scaling and Parasitic Capacitance Reduction
- A. Greene
- Huimei Zhou
- et al.
- 2019
- VLSI Technology 2019
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57 results for Miaomiao Wang
On the Frequency Dependence of Bulk Trap Generation during AC Stress in Si and SiGe RMG P-FinFETs
- Narendra Parihar
- Uma Sharma
- et al.
- 2019
- IRPS 2019
Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor
- Miaomiao Wang
- Jingyun Zhang
- et al.
- 2019
- IRPS 2019
Leakage aware Si/SiGe CMOS FinFET for low power applications
- G. Tsutsui
- C. Durfee
- et al.
- 2018
- VLSI Technology 2018
Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id-Vd characteristics
- Miaomiao Wang
- Richard G. Southwick
- et al.
- 2018
- IRPS 2018
Hot carrier reliability in ultra-scaled sige channel p-FinFETs
- Miaomiao Wang
- X. Miao
- et al.
- 2017
- ASICON 2017
Comparison of DC and AC NBTI kinetics in RMG Si and SiGe p-FinFETs
- Narendra Parihar
- Richard G. Southwick
- et al.
- 2017
- IRPS 2017
Process optimizations for NBTI/PBTI for future replacement metal gate technologies
- Barry P. Linder
- A. Dasgupta
- et al.
- 2016
- IRPS 2016
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
- Dechao Guo
- G. Karve
- et al.
- 2016
- VLSI Technology 2016
Separation of interface states and electron trapping for hot carrier degradation in ultra-scaled replacement metal gate n-FinFET
- Miaomiao Wang
- Zuoguang Liu
- et al.
- 2015
- IRPS 2015