Detailed study of fast transient relaxation of Vt instability in HKMG nFETs
- K. Zhao
- James Stathis
- et al.
- 2012
- IRPS 2012
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57 results for Miaomiao Wang
Analysis of parasitic resistance in double gate FinFETs with different fin lengths
- X. Yang
- Kingsuk Maitra
- et al.
- 2011
- IEEE International SOI Conference 2011
Sub-25nm FinFET with advanced fin formation and short channel effect engineering
- Tenko Yamashita
- Veeraraghvan S. Basker
- et al.
- 2011
- VLSI Technology 2011
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Technology 2011
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Circuits 2011
Full metal gate with borderless contact for 14 nm and beyond
- Soon-Cheon Seo
- L.F. Edge
- et al.
- 2011
- VLSI Technology 2011
Hot-carrier degradation in undoped-body etsoi fets and soi finfets
- Miaomiao Wang
- Pranita Kulkarni
- et al.
- 2010
- IRPS 2010
Challenges of gate stack TDDB in gate-allaround nanosheet towards further scaling
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2024
- IRPS 2024
Challenges of gate stack TDDB in gate-all-around nanosheet towards further scaling
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2024
- IRPS 2024
A Review of Reliability in Gate-all-around Nanosheet Devices
- 2024
- Micromachines