Analysis of parasitic resistance in double gate FinFETs with different fin lengths
- X. Yang
- Kingsuk Maitra
- et al.
- 2011
- IEEE International SOI Conference 2011
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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55 results for Miaomiao Wang
Sub-25nm FinFET with advanced fin formation and short channel effect engineering
- Tenko Yamashita
- Veeraraghvan S. Basker
- et al.
- 2011
- VLSI Technology 2011
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Technology 2011
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Circuits 2011
Full metal gate with borderless contact for 14 nm and beyond
- Soon-Cheon Seo
- L.F. Edge
- et al.
- 2011
- VLSI Technology 2011
Hot-carrier degradation in undoped-body etsoi fets and soi finfets
- Miaomiao Wang
- Pranita Kulkarni
- et al.
- 2010
- IRPS 2010
Challenges of gate stack TDDB in gate-allaround nanosheet towards further scaling
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2024
- IRPS 2024
Challenges of gate stack TDDB in gate-all-around nanosheet towards further scaling
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2024
- IRPS 2024
Improved Air Spacer for Highly Scaled CMOS Technology
- Kangguo Cheng
- Chanro Park
- et al.
- 2020
- IEEE Transactions on Electron Devices
A maximum extreme-value distribution model for switching conductance of oxide-RRAM in memory applications
- Ernest Wu
- Takashi Ando
- et al.
- 2020
- Applied Physics Letters