Recent advances in spin torque MRAM
- D.C. Worledge
- M. Gajek
- et al.
- 2012
- IMW 2012
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70 results for Daniel Worledge
Spin-torque switchable perpendicular magnetic junctions for solid-state memory
- Jonathan Z. Sun
- R.P. Robertazzi
- et al.
- 2011
- DRC 2011
Spin transfer switching in sub-100nm magnetic tunnel junctions
- S. Assefa
- J.Z. Sun
- et al.
- 2006
- INTERMAG 2006
Recent advances in MRAM technology
- W.J. Gallagher
- D.W. Abraham
- et al.
- 2005
- VLSI Technology 2005
A 0.18μm Logic-based MRAM Technology for High Performance Nonvolatile Memory Applications
- A.R. Sitaram
- D.W. Abraham
- et al.
- 2003
- VLSI Technology 2003
Spin-Transfer-Torque MRAM: the Next Revolution in Memory
- 2022
- IMW 2022
Spin-Transfer Torque Magnetoresistive Random Access Memory Technology Status and Future Directions
- Daniel Worledge
- Guohan Hu
- 2024
- Nat. Rev. Electr. Eng.
Demonstration of ultralow bit error rates for spin-torque magnetic random-access memory with perpendicular magnetic anisotropy
- J. Nowak
- R.P. Robertazzi
- et al.
- 2011
- IEEE Magnetics Letters
Impact of External Magnetic Fields on STT-MRAM: An Application Note
- Bernard Dieny
- Sanjeev Aggarwal
- et al.
- 2024
- IEEE ED-M
A snapshot review of double magnetic junctions for STT-MRAM
- D.C. Worledge
- Guohan Hu
- 2023
- MRS Advances