Two-dimensional pattern formation using graphoepitaxy of PS-b-PMMA block copolymers for advanced FinFET device and circuit fabrication
- Hsinyu Tsai
- Jed W. Pitera
- et al.
- 2014
- ACS Nano
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53 results for Jim Bucchignano
Sharp reduction of contact resistivities by effective schottky barrier lowering with silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- IEEE Electron Device Letters
Resistance anomaly near the superconducting transition temperature in short aluminum wires
- P. Santhanam
- C.C. Chi
- et al.
- 1991
- Physical Review Letters
High chi block copolymer DSA to improve pattern quality for FinFET device fabrication
- Hsinyu Tsai
- Hiroyuki Miyazoe
- et al.
- 2016
- SPIE Advanced Lithography 2016
Self-aligned line-space pattern customization with directed self-assembly graphoepitaxy at 24nm pitch
- Hsinyu Tsai
- Hiroyuki Miyazoe
- et al.
- 2015
- SPIE Advanced Lithography 2015
Pattern transfer of directed self-assembly (DSA) patterns for CMOS device applications
- Hsin-Yu Tsai
- Hiroyuki Miyazoe
- et al.
- 2013
- SPIE Advanced Lithography 2013
Patterning of CMOS device structures for 40-80nm pitches and beyond
- Sebastian U. Engelmann
- R.M. Martin
- et al.
- 2012
- SPIE Advanced Lithography 2012
Pattern collapse mitigation strategies for EUV Lithography
- Dario L. Goldfarb
- Robert L. Bruce
- et al.
- 2012
- SPIE Advanced Lithography 2012
A 0.021 μm2 trigate SRAM cell with aggressively scaled gate and contact pitch
- Michael A. Guillorn
- Josephine Chang
- et al.
- 2011
- VLSI Technology 2011
Effective schottky barrier lowering for contact resistivity reduction using silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- VLSI-TSA 2010