Full metal gate with borderless contact for 14 nm and beyond
- Soon-Cheon Seo
- L.F. Edge
- et al.
- 2011
- VLSI Technology 2011
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74 results for Vamsi Paruchuri
Opportunities and challenges of FinFET as a device structure candidate for 14nm node CMOS technology
- Tenko Yamashita
- Veeraraghvan S. Basker
- et al.
- 2011
- CSTIC 2011
Intrinsic effects of the crystal orientation difference between (100) and (110) silicon substrates on characteristics of high-k/metal gate metal-oxide-semiconductor field-effect transistors
- Ryosuke Iijima
- Lisa F. Edge
- et al.
- 2011
- Japanese Journal of Applied Physics
Physical mechanism of threshold voltage modulation by ge channel ion implantation in the TiN/HfO2 gate stack systems
- Yoshinori Tsuchiya
- Nathaniel Berliner
- et al.
- 2011
- Japanese Journal of Applied Physics
Aggressively scaled strained-silicon-on-insulator undoped-body High-κ/Metal-Gate nFinFETs for high-performance logic applications
- Kingsuk Maitra
- Ali Khakifirooz
- et al.
- 2011
- IEEE Electron Device Letters
Characteristics of La2O3-and Al2O 3-capped HfO2 dielectric metal-oxide-semiconductor field-effect transistors fabricated on (110)-oriented silicon substrates
- Ryosuke Iijima
- Lisa F. Edge
- et al.
- 2011
- Japanese Journal of Applied Physics
Gate capacitance reduction due to the inversion layer in high-k/metal gate stacks within a subnanometer EOT regime
- Ryosuke Iijima
- Lisa F. Edge
- et al.
- 2011
- IEEE T-ED
Materials and electrical characterization of physical vapor deposited Lax Lu1-x Oinf3 thin films on 300 mm silicon
- L.F. Edge
- T. Vo
- et al.
- 2011
- Applied Physics Letters
Physical origin of pFET threshold voltage modulation by ge channel ion implantation (GC-I/I)
- Yoshinori Tsuchiya
- Nathaniel Berliner
- et al.
- 2010
- IEDM 2010
Characterization of inversion-layer capacitance of electrons in high-k/metal gate stacks
- Ryosuke Iijima
- Lisa F. Edge
- et al.
- 2010
- IEEE T-ED