Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT
- G. Tsutsui
- Ruqiang Bao
- et al.
- 2016
- IEDM 2016
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7 results for Jody Fronheiser
FinFET performance with Si:P and Ge:Group-III-Metal metastable contact trench alloys
- Oleg Gluschenkov
- Zuoguang Liu
- et al.
- 2016
- IEDM 2016
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- Ruilong Xie
- Pietro Montanini
- et al.
- 2016
- IEDM 2016
Sub-10-9 Ω-cm2 n-Type Contact Resistivity for FinFET Technology
- Hiroaki Niimi
- Zuoguang Liu
- et al.
- 2016
- IEEE Electron Device Letters
Selective GeOx-scavenging from interfacial layer on Si1-xGex channel for high mobility Si/Si1-xGex CMOS application
- Choonghyun Lee
- H. Kim
- et al.
- 2016
- VLSI Technology 2016
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
- Dechao Guo
- G. Karve
- et al.
- 2016
- VLSI Technology 2016
First-Principles Investigations of TiGe/Ge Interface and Recipes to Reduce the Contact Resistance
- H. Dixit
- Chengyu Niu
- et al.
- 2017
- IEEE T-ED