Growth and scaling of oxide conduction after breakdown
- Barry P. Linder
- James H. Stathis
- et al.
- 2003
- IRPS 2003
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20 results for S. Lombardo
Growth and scaling of oxide conduction after breakdown
- Barry P. Linder
- James H. Stathis
- et al.
- 2003
- IRPS 2003
Analysis of the effect of the gate oxide breakdown on SRAM stability
- R. Rodríguez
- J.H. Stathis
- et al.
- 2002
- Microelectronics Reliability
Dependence of post-breakdown conduction on gate oxide thickness
- S. Lombardo
- J.H. Stathis
- et al.
- 2002
- Microelectronics Reliability
Electron energy dissipation model of gate dielectric progressive breakdown in n- and p-channel field effect transistors
- S. Lombardo
- Ernest Y. Wu
- et al.
- 2017
- Journal of Applied Physics
A novel approach to characterization of progressive breakdown in high-k/metal gate stacks
- R. Pagano
- S. Lombardo
- et al.
- 2008
- Microelectronics Reliability
Dielectric breakdown mechanisms in gate oxides
- Salvatore Lombardo
- James H. Stathis
- et al.
- 2005
- Journal of Applied Physics
Reliability of MOS devices with tungsten gates
- F. Palumbo
- S. Lombardo
- et al.
- 2004
- Microelectronic Engineering
On the role of interface states in low-voltage leakage currents of metal-oxide-semiconductor structures
- F. Crupi
- C. Ciofi
- et al.
- 2002
- Applied Physics Letters
Softening of breakdown in ultra-thin gate oxide nMOSFETs at low inversion layer density
- S. Lombardo
- F. Crupi
- et al.
- 2001
- Annual Proceedings - Reliability Physics (Symposium)