SiGe MOSFET structures on silicon-on-sapphire substrates grown by ultra-high vacuum chemical vapor deposition
- P.M. Mooney
- J.O. Chu
- et al.
- 2000
- Journal of Electronic Materials
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149 results for John A. Ott
X-ray diffraction analysis of SiGe/Si heterostructures on sapphire substrates
- P.M. Mooney
- J.A. Ott
- et al.
- 1998
- Applied Physics Letters
Effect of TiOX nucleation layer on crystallization of Bi4Ti3O12 films
- Deborah A. Neumayer
- Peter R. Duncombe
- et al.
- 1997
- Integrated Ferroelectrics
Titanium silicide/germanide formation on submicron features for high mobility SiGe channel field effect transistors
- P. Agnello
- V.P. Kesan
- et al.
- 1994
- Journal of Electronic Materials
Heteroepitaxy of β-FeSi2 on unstrained and strained Si(100) surfaces
- D.R. Peale
- R. Haight
- et al.
- 1993
- Applied Physics Letters
Cyclotron resonance studies of two-dimensional holes in strained Si 1-xGex/Si quantum wells
- J.-P. Cheng
- V.P. Kesan
- et al.
- 1993
- Applied Physics Letters
Influence of device structure and growth conditions on the tunneling characteristics of Si/Si1-xGex double barrier structures
- Ulf Gennser
- V.P. Kesan
- et al.
- 1993
- Journal of Electronic Materials
In situ study of relaxation of SiGe thin films by the modified Frank-Read mechanism
- F.K. LeGoues
- J.A. Ott
- et al.
- 1992
- Applied Physics Letters
Selective growth of silicon-germanium alloys by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1991
- Applied Physics Letters