Adaptive wiring for 20 nm scale epitaxial silicon Ohmic contacts to silicon nanowires
- M.J. Rooks
- G.M. Cohen
- et al.
- 2007
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
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149 results for John A. Ott
Understanding mask-edge and trench-edge defects produced during solid phase epitaxy of amorphized regions in (001) and (Oil) Si: Observations and model
- Katherine L. Saenger
- Haizhou Yin
- et al.
- 2007
- MRS Spring 2007
Scalability of Direct Silicon Bonded (DSB) technology for 32nm node and beyond
- Haizhou Yin
- C.Y. Sung
- et al.
- 2007
- VLSI Technology 2007
Uniaxial strain relaxation on ultra-thin strained-Si directly on insulator (SSDOI) substrates
- Haizhou Yin
- Z. Ren
- et al.
- 2006
- ICSICT 2006
Nanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain
- G.M. Cohen
- M.J. Rooks
- et al.
- 2007
- Applied Physics Letters
An examination of facet formation during solid phase epitaxy of line-shaped amorphized regions in (001) and (011) Si
- K.L. Saenger
- K.E. Fogel
- et al.
- 2007
- Journal of Applied Physics
Mixed orientation Si-Si interfaces by hydrophilic bonding and high temperature oxide dissolution: Wafer fabrication technique and device applications
- K.L. Saenger
- J.P. De Souza
- et al.
- 2007
- ECS Meeting 2007
Mask-edge defects in hybrid orientation direct-Si-bonded substrates recrystallized by solid phase epitaxy after patterned amorphization
- K.L. Saenger
- K.E. Fogel
- et al.
- 2007
- Journal of Applied Physics
A study of trench-edge defect formation in (001) and (011) silicon recrystallized by solid phase epitaxy
- K.L. Saenger
- J.P. De Souza
- et al.
- 2007
- Journal of Applied Physics
Doping of germanium nanowires grown in presence of PH3
- E. Tutuc
- J.O. Chu
- et al.
- 2006
- Applied Physics Letters