Strain loss in epitaxial Si: C films induced by phosphorus diffusion
- B.F. Yang
- J.P. De. Souzab
- et al.
- 2008
- ECS Meeting 2008
Publications
Date
Featured collections
Popular topics
97 results for Katherine Saenger
Higher hole mobility induced by twisted Direct Silicon Bonding (DSB)
- M. Hamaguchi
- H. Yin
- et al.
- 2008
- VLSI Technology 2008
Effect of end-of-range defects on device leakage in direct silicon bonded (DSB) technology
- Haizhou Yin
- M. Hamaguchi
- et al.
- 2008
- VLSI-TSA 2008
Scalability of Direct Silicon Bonded (DSB) technology for 32nm node and beyond
- Haizhou Yin
- C.Y. Sung
- et al.
- 2007
- VLSI Technology 2007
Understanding mask-edge and trench-edge defects produced during solid phase epitaxy of amorphized regions in (001) and (Oil) Si: Observations and model
- Katherine L. Saenger
- Haizhou Yin
- et al.
- 2007
- MRS Spring 2007
Uniaxial strain relaxation on ultra-thin strained-Si directly on insulator (SSDOI) substrates
- Haizhou Yin
- Z. Ren
- et al.
- 2006
- ICSICT 2006
Mixed orientation Si-Si interfaces by hydrophilic bonding and high temperature oxide dissolution: Wafer fabrication technique and device applications
- K.L. Saenger
- J.P. De Souza
- et al.
- 2007
- ECS Meeting 2007
Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping
- S.J. Koester
- K.L. Saenger
- et al.
- 2004
- DRC 2004
SiGe MODFETS: Overview and issues for sub-100 nm gate-length scaling
- S.J. Koester
- K.L. Saenger
- et al.
- 2004
- ECS Meeting 2004
High-performance SiGe MODFET technology
- S.J. Koester
- J.O. Chu
- et al.
- 2004
- MRS Proceedings 2004