High performance 0.18 μm SOI CMOS technology
- E. Leobandung
- E. Barth
- et al.
- 1999
- IEDM 1999
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51 results for Jeffrey W. Sleight
Scalability of SOI technology into 0.13 μm 1.2 V CMOS generation
- E. Leobandung
- M. Sherony
- et al.
- 1998
- IEDM 1998
Quasiparticle tunneling as a probe of Josephson junction barrier and capacitor material in superconducting qubits
- C. Kurter
- Conal E. Murray
- et al.
- 2022
- npj Quantum Information
Ultra low contact resistivities for CMOS beyond 10-nm node
- Zhen Zhang
- Siyuranga Obasa Koswatta
- et al.
- 2013
- IEEE Electron Device Letters
Universality of short-channel effects in undoped-body silicon nanowire MOSFETs
- Sarunya Bangsaruntip
- Guy M. Cohen
- et al.
- 2010
- IEEE Electron Device Letters
High-performance undoped-body 8-nm-thin SOI field-effect transistors
- Amlan Majumdar
- Zhibin Ren
- et al.
- 2008
- IEEE Electron Device Letters
OFF-state modulation of SOI floating-body
- Josephine B. Chang
- Jeffrey W. Sleight
- et al.
- 2006
- IEEE Electron Device Letters
Effect of tensile uniaxial stress on the electron transport properties of deeply scaled FD-SOI n-type MOSFETs
- H. Nayfeh
- D. Singh
- et al.
- 2006
- IEEE Electron Device Letters
Strained ultrahigh performance fully depleted nMOSFETs with ft of 330 GHz and sub-30-nm gate lengths
- D. Singh
- Keith A. Jenkins
- et al.
- 2006
- IEEE Electron Device Letters
High-performance Si1-xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
- P. Hashemi
- M. Kobayashi
- et al.
- 2013
- VLSI Circuits 2013