Dopant redistribution at Si surfaces during vacuum anneal
- M. Liehr
- M. Renier
- et al.
- 1987
- Journal of Applied Physics
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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49 results for Michael Liehr
High temperature reaction and defect chemistry at the Si/SiO2 interface
- K. Hofmann
- G.W. Rubloff
- et al.
- 1987
- Applied Surface Science
CaF2/Si(111): Thin-film characterization by high-resolution electron-energy-loss spectroscopy
- M. Liehr
- P.A. Thiry
- et al.
- 1986
- Physical Review B
Influence of thin SiO2 interlayers on chemical reaction and microstructure at the Ni/Si(111) interface
- M. Liehr
- H. Lefakis
- et al.
- 1986
- Physical Review B
Schottky barrier, electronic states and microstructure at Ni silicide-silicon interfaces
- P.S. Ho
- M. Liehr
- et al.
- 1986
- Surface Science
High resolution electron energy loss study of AlxGax_xAs mixed crystals
- T. Kuech
- M. Liehr
- et al.
- 1986
- JVSTA
Schottky barrier heights of epitaxial Ni-silicides on Si(111)
- M. Liehr
- P.E. Schmid
- et al.
- 1986
- JVSTA
Summary Abstract: The interaction mechanism of inelastic electron tunneling spectroscopy probed by high resolution electron energy loss spectroscopy
- M. Liehr
- P.A. Thiry
- et al.
- 1985
- JVSTA
Chemical reactions at Pt/oxide/Si and Ti/oxide/Si interfaces
- M. Liehr
- F.K. LeGoues
- et al.
- 1985
- JVSTA