E.J. Van Loenen, J.F. Van Der Veen, et al.
Surface Science
The correlation of Schottky-barrier height and microstructure has been investigated with three types of epitaxial Ni silicides, type-A and -B NiSi2 and NiSi, on Si(111) substrates. All these interfaces can be formed to yield a barrier height of 0.78 eV. This high barrier was obtained only for near-perfect interfaces; otherwise-less-perfect silicides yielded low barrier heights of 0.66 eV. This barrier height is controlled primarily by the structural perfection of the interface rather than by the specific type of epitaxy. © 1985 The American Physical Society.
E.J. Van Loenen, J.F. Van Der Veen, et al.
Surface Science
F.K. LeGoues, B.D. Silverman, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
F.K. LeGoues, B.S. Meyerson, et al.
Journal of Applied Physics
F.K. LeGoues, J. Tersoff, et al.
Physical Review Letters