Low-temperature growth of epitaxial (1 0 0) silicon based on silane and disilane in a 300 mm UHV/CVD cold-wall reactor
- Thomas N. Adam
- Stephen W. Bedell
- et al.
- 2010
- Journal of Crystal Growth
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Challenges and opportunities of extremely thin SOI (ETSOI) CMOS technology for future low power and general purpose system-on-chip applications
- A. Khakifirooz
- Kangguo Cheng
- et al.
- 2010
- VLSI-TSA 2010
Ultra-thin-body and BOX (UTBB) Fully Depleted (FD) device integration for 22nm node and beyond
- Q. Liu
- A. Yagishita
- et al.
- 2010
- VLSI Technology 2010
Challenges and solutions of extremely thin SOI (ETSOI) for CMOS scaling to 22nm node and beyond
- Kangguo Cheng
- Ali Khakifirooz
- et al.
- 2010
- CSTIC 2010
Low-temperature epitaxial growth of Si, SiGe, Ge, and SiC in a 300mm UHV/CVD reactor
- Thomas N. Adam
- Stephen W. Bedell
- et al.
- 2010
- ECS Transactions
Applications of epitaxy for semiconductor technology
- Devendra Sadana
- Stephen W. Bedell
- et al.
- 2010
- ECS Transactions
300mm cold-wall UHV/CVD reactor for low-temperature epitaxial (100) silicon
- Thomas N. Adam
- Stephen W. Bedell
- et al.
- 2010
- ECS Transactions
Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications
- K. Cheng
- A. Khakifirooz
- et al.
- 2009
- IEDM 2009
FDSOI CMOS with dual backgate control for performance and power modulation
- Jeng-Bang Yau
- Jin Cai
- et al.
- 2009
- VLSI-TSA 2009
Fully depleted extremely thin SOI technology fabricated by a novel integration scheme featuring implant-free, zero-silicon-loss, and faceted raised source/drain
- K. Cheng
- A. Khakifirooz
- et al.
- 2009
- VLSI Technology 2009