Poly-Si/AlN/HfSiO stack for ideal threshold voltage and mobility in sub-100 nm MOSFETs
- K.-L. Lee
- M.M. Frank
- et al.
- 2006
- VLSI Technology 2006
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76 results for Nestor Bojarczuk
Charge defects, Vt shifts, and the solution to the high-k metal gate n-MOSFET problem
- Supratik Guha
- Vijay Narayanan
- et al.
- 2006
- Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2006
Negative differential resistance in ultra-thin Ge-on-insulator FETs
- D. Kazazis
- A. Zaslavsky
- et al.
- 2006
- ISTDM 2006
Optimization of high κ gate stacks with poly-Si, FUSI and metal electrodes
- R. Jammy
- V. Narayanan
- et al.
- 2005
- ISTC 2005
Poly-Si/high-k gate stacks with near-ideal threshold voltage and mobility
- M.M. Frank
- V.K. Paruchuri
- et al.
- 2005
- VLSI-TSA 2005
Materials interaction at the nanoscale in high-k metal gate stacks: The role of oxygen
- S. Guha
- E.J. Preisler
- et al.
- 2005
- ECS Meeting 2005
Systematic study of pFET Vt with Hf-based gate stacks with poly-Si and FUSI gates
- E. Cartier
- V. Narayanan
- et al.
- 2004
- VLSI Technology 2004
Electrical characteristics of metal - (La0.27Y 0.73)2O3 - Silicon capacitors
- E.J. Preisler
- N.A. Bojarczuk
- et al.
- 2003
- MRS Proceedings 2003
Epitaxial Si films grown on lattice matched (LaxY 1-x)O3/Si (111) structures by molecular beam epitaxy
- V. Narayanan
- S. Guha
- et al.
- 2002
- MRS Proceedings 2002
Gallium nitride based LEDs on silicon substrates
- N.A. Bojarczuk
- S. Guha
- 1999
- Proceedings of SPIE - The International Society for Optical Engineering