Evaluation of (110) versus (001) Channel Orientation for Improved nFET/pFET Device Performance Trade-Off in Gate-All-Around Nanosheet Technology
- Shogo Mochizuki
- Nicolas Loubet
- et al.
- 2023
- IEDM 2023
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85 results for Nelson Felix
Scaling opportunities for Gate-All-Around: A patterning perspective
- I. Seshadri
- E. Miller
- et al.
- 2023
- IEDM 2023
Advanced BEOL Materials, Processes, and Integration to Reduce Line Resistance of Damascene Cu, Co, and Subtractive Ru Interconnects
- Takeshi Nogami
- Oleg Gluschenkov
- et al.
- 2022
- VLSI Technology and Circuits 2022
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- Ruilong Xie
- Pietro Montanini
- et al.
- 2016
- IEDM 2016
Scaling opportunities for Gate-All-Around and beyond: A patterning perspective
- Indira Seshadri
- Eric Miller
- et al.
- 2023
- IEDM 2023
Directed self-assembly of block copolymers for 7 nanometre FinFET technology and beyond
- Charlie Liu
- Elliott Franke
- et al.
- 2018
- Nature Electronics
EUV patterned gate variation reduction in next generation transistor architectures
- Gopal Kenath
- Martin Burkhardt
- et al.
- 2024
- SPIE Advanced Lithography + Patterning 2024
Epi Source-Drain Damage Mitigation During Channel Release of Stacked Nanosheet Gate-All-Around Transistors
- Curtis Durfee
- Ivo Otto
- et al.
- 2023
- ECS Meeting 2023
Epi Source/Drain Damage Mitigation with Inner Spacer and Buffer Optimization in Stacked Nanosheet Gate-All-Around Transistors
- Curtis Durfee
- Ivo Otto
- et al.
- 2023
- SSDM 2023
EUV single exposure via patterning at aggressive pitch
- Jing Guo
- Jennifer Church
- et al.
- 2021
- SPIE Advanced Lithography 2021