A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)

R. Beach; T. Min; C. Horng; Q. Chen; P. Sherman; S. Le; S. Young; K. Yang; H. Yu; X. Lu; W. Kula; T. Zhong; R. Xiao; A. Zhong; G. Liu; J. Kan; J. Yuan; J. Chen; R. Tong; J. Chien; T. Torng; D.D. Tang; P.-K. Wang; M.M. Chen; S. Assefa; M. Qazif; J. Debrosse; M.C. Gaidis; S. Kanakasabapathy; Y. Lu; J. Nowak; E.J.M. O&#039;Sullivan; T. Maffitt; J.Z. Sun; W.J. Gallagher

doi:10.1109/IEDM.2008.4796679

IEDM 2008

Conference paper

01 Dec 2008

A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)

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Abstract

We demonstrated a robust magnetic tunnel junction (MTJ) with a resistance-area product RA=8 ω-μm 2 that simultaneously satisfies the statistical requirements of high tunneling magnetoresistance TMR > 15σ(R p), write threshold spread σ(Vw)/

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