Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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20 results for John Rozen

PBTI in InGaAs MOS capacitors with Al₂O₃/HfO₂/TiN gate stacks: Interface-state generation
- - Eduard Cartier
  - Martin M. Frank
  - et al.
- 2018
- IRPS 2018
Electron mobility in thin In_0.53Ga_0.47As channel
- - Eduard Cartier
  - Amlan Majumdar
  - et al.
- 2017
- ESSDERC 2017
High performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length
- - Xiao Sun
  - Christopher P. D’Emic
  - et al.
- 2017
- VLSI Technology 2017
Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths
- - Pouya Hashemi
  - Takashi Ando
  - et al.
- 2016
- VLSI Technology 2016
Crystallization of hafnium-oxide-based ferroelectrics for BEOL integration
- - Martin M. Frank
  - Eduard A. Cartier
  - et al.
- 2022
- EDTM 2022
Neural Network Training With Asymmetric Crosspoint Elements
- - Murat Onen
  - Tayfun Gokmen
  - et al.
- 2022
- Frontiers in Artificial Intelligence
Evolution of interfacial Fermi level in In_0.53Ga_0.47As/high-κ/TiN gate stacks
- - Adra Carr
  - John Rozen
  - et al.
- 2015
- Applied Physics Letters
Enhancing interface quality by gate dielectric deposition on a nitrogen-conditioned 4H-SiC surface
- - John Rozen
  - Masahiro Nagano
  - et al.
- 2012
- Journal of Materials Research
Scaling between channel mobility and interface state density in SiC MOSFETs
- - John Rozen
  - Ayayi C. Ahyi
  - et al.
- 2011
- IEEE T-ED
Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO₂/SiC interfaces
- - A.F. Basile
  - John Rozen
  - et al.
- 2011
- Journal of Applied Physics