PBTI in InGaAs MOS capacitors with Al2O3/HfO2/TiN gate stacks: Interface-state generation
- Eduard Cartier
- Martin M. Frank
- et al.
- 2018
- IRPS 2018
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20 results for John Rozen
Electron mobility in thin In0.53Ga0.47As channel
- Eduard Cartier
- Amlan Majumdar
- et al.
- 2017
- ESSDERC 2017
High performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length
- Xiao Sun
- Christopher P. D’Emic
- et al.
- 2017
- VLSI Technology 2017
Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths
- Pouya Hashemi
- Takashi Ando
- et al.
- 2016
- VLSI Technology 2016
Crystallization of hafnium-oxide-based ferroelectrics for BEOL integration
- Martin M. Frank
- Eduard A. Cartier
- et al.
- 2022
- EDTM 2022
Neural Network Training With Asymmetric Crosspoint Elements
- Murat Onen
- Tayfun Gokmen
- et al.
- 2022
- Frontiers in Artificial Intelligence
Evolution of interfacial Fermi level in In0.53Ga0.47As/high-κ/TiN gate stacks
- Adra Carr
- John Rozen
- et al.
- 2015
- Applied Physics Letters
Enhancing interface quality by gate dielectric deposition on a nitrogen-conditioned 4H-SiC surface
- John Rozen
- Masahiro Nagano
- et al.
- 2012
- Journal of Materials Research
Scaling between channel mobility and interface state density in SiC MOSFETs
- John Rozen
- Ayayi C. Ahyi
- et al.
- 2011
- IEEE T-ED
Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces
- A.F. Basile
- John Rozen
- et al.
- 2011
- Journal of Applied Physics