Publications

20 results for John Rozen

High performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length
- - Xiao Sun
  - Christopher P. D’Emic
  - et al.
- 2017
- VLSI Technology 2017
High Mobility High-Ge-Content SiGe PMOSFETs Using Al₂O₃/HfO₂ Stacks with In-Situ O₃ Treatment
- - Takashi Ando
  - Pouya Hashemi
  - et al.
- 2017
- IEEE Electron Device Letters
Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths
- - Pouya Hashemi
  - Takashi Ando
  - et al.
- 2016
- VLSI Technology 2016
CMOS compatible high performance IIIV devices: Opportunities and challenges
- - Yanning Sun
  - Kuen-Ting Shiu
  - et al.
- 2016
- ECS Meeting 2016
Evolution of interfacial Fermi level in In_0.53Ga_0.47As/high-κ/TiN gate stacks
- - Adra Carr
  - John Rozen
  - et al.
- 2015
- Applied Physics Letters
High-performance CMOS-compatible self-aligned In_0.53Ga_0.47As MOSFETs with GMSAT over 2200 μs/μm at V_DD = 0.5 v
- - Yanning Sun
  - Amlan Majumdar
  - et al.
- 2014
- IEDM 2014
Electrical characterization of FinFETs with fins formed by directed self assembly at 29 nm fin pitch using a self-aligned fin customization scheme
- - Hsinyu Tsai
  - Hiroyuki Miyazoe
  - et al.
- 2014
- IEDM 2014
Enhancing interface quality by gate dielectric deposition on a nitrogen-conditioned 4H-SiC surface
- - John Rozen
  - Masahiro Nagano
  - et al.
- 2012
- Journal of Materials Research
Scaling between channel mobility and interface state density in SiC MOSFETs
- - John Rozen
  - Ayayi C. Ahyi
  - et al.
- 2011
- IEEE T-ED
Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO₂/SiC interfaces
- - A.F. Basile
  - John Rozen
  - et al.
- 2011
- Journal of Applied Physics