Gate length and performance scaling of undoped-body extremely thin SOI MOSFETs

Abstract

In this letter, we show that undoped-body extremely thin SOI (ETSOI) MOSFETs with SOI thickness in the 4-6-nm range have excellent short-channel control down to 20-25-nm gate lengths, suitable for the 22-nm technology node and beyond. We demonstrate that 6-nm-thin ETSOI devices can deliver high drive currents required for logic applications. Finally, we bring to fore the need for improvements in etch and doping processes to reduce series resistance of 4-nm-thin ETSOI devices in order to make them a viable option for the 15-nm technology node. © 2009 IEEE.