Low temperature selective epitaxial growth of silicon at atmospheric pressure in an ultra-clean system
- T.O. Sedgwick
- P. Agnello
- et al.
- 1990
- Silicon Materials Science and Technology 1990
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49 results for P. Agnello
The Use of Gas Monitors to Characterize a Low-Temperature Atmospheric-Pressure Epitaxial System
- Paul D. Agnello
- Thomas O. Sedgwick
- 2019
- JES
Growth of Facet-Free Selective Silicon Epitaxy at Low Temperature and Atmospheric Pressure
- T.O. Sedgwick
- P. Agnello
- et al.
- 2019
- JES
Optimization of silicon technology for the IBM System z9
- Daniel J. Poindexter
- Scott R. Stiffler
- et al.
- 2007
- IBM J. Res. Dev
Process requirements for continued scaling of CMOS - The need and prospects for atomic-level manipulation
- Paul D. Agnello
- 2002
- IBM J. Res. Dev
Thickness measurement of ultra-thin gate dielectrics under inversion condition
- W. Zhu
- Mukesh Khare
- et al.
- 2001
- International Symposium on VLSI Technology, Systems, and Applications, Proceedings
CMOS active pixel image sensors fabricated using a 1.8-V, 0.25-/spl μ/m CMOS technology
- H. Wong
- R. Chang
- et al.
- 1998
- IEEE Transactions on Electron Devices
Identification of gate electrode discontinuities in submicron CMOS technologies, and effect on circuit performance
- Keith A. Jenkins
- Joachim N. Burghartz
- et al.
- 1996
- IEEE Transactions on Electron Devices
Titanium silicide/germanide formation on submicron features for high mobility SiGe channel field effect transistors
- P. Agnello
- V.P. Kesan
- et al.
- 1994
- Journal of Electronic Materials
Fabrication of high performance 512Kb SRAMs in 0.25 μm CMOS technology using x-ray lithography
- R. Viswanathan
- David Seeger
- et al.
- 1994
- Microelectronic Engineering