Fabrication of high performance 512Kb SRAMs in 0.25 μm CMOS technology using x-ray lithography
- R. Viswanathan
- David Seeger
- et al.
- 1994
- Microelectronic Engineering
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49 results for P. Agnello
Submicron CMOS Gate Electrode Discontinuity: Electrical Signature and Effect on Circuit Speed
- Keith A. Jenkins
- J.N. Burghartz
- et al.
- 1993
- IEDM 1993
Improved control of momentary rapid thermal annnealing for silicidation
- P. Agnello
- A. Fink
- 1993
- Journal of Electronic Materials
A high performance 0.15 μm CMOS
- G. Shahidi
- J. Warnock
- et al.
- 1993
- VLSI Technology 1993
A SiGe-base PNP ECL circuit technology
- D.L. Harame
- J.H. Comfort
- et al.
- 1993
- VLSI Technology 1993
Experimental 0.1-um p-Channel MOSFET with p+-Polysilicon Gate on 35-A Gate Oxide
- Yuan Taur
- S. Cohen
- et al.
- 1993
- IEEE Electron Device Letters
Growth Rate Enhancement of Heavy n- and P-Type Doped Silicon Deposited by Atmospheric-Pressure Chemical Vapor Deposition at Low Temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1993
- JES
Effects of Trace Surface Oxidation in Low Temperature Epitaxy Grown from Dichlorosilane
- T.O. Sedgwick
- P. Agnello
- et al.
- 1993
- JES
Mixed Schottky/p-n junction behavior in diodes produced by outdiffusion from polycrystalline cobalt disilicide
- D.P. Foty
- H.I. Hanafi
- et al.
- 1992
- IEDM 1992
High transconductance 0.1 μ m pMOSFET
- Y. Taur
- S. Cohen
- et al.
- 1992
- IEDM 1992