High performance 0.18 μm SOI CMOS technology
- E. Leobandung
- E. Barth
- et al.
- 1999
- IEDM 1999
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28 results for D. Schepis
Scalability of SOI technology into 0.13 μm 1.2 V CMOS generation
- E. Leobandung
- M. Sherony
- et al.
- 1998
- IEDM 1998
7.9/5.5 psec room/low temperature SOI CMOS
- F. Assaderaghi
- W. Rausch
- et al.
- 1997
- IEDM 1997
0.25 μm CMOS SOI technology and its application to 4 Mb SRAM
- D. Schepis
- F. Assaderaghi
- et al.
- 1997
- IEDM 1997
Deposited ALD SiO2 high-k/metal gate interface for high voltage analog and I/O devices on next generation alternative channels and FINFET device structures
- S. Siddiqui
- M.M. Chowdhury
- et al.
- 2013
- ECS Meeting 2013
High performance bulk planar 20nm CMOS technology for low power mobile applications
- Huiling Shang
- Sameer Jain
- et al.
- 2012
- VLSI Technology 2012
High-κ/metal gate low power bulk technology - Performance evaluation of standard CMOS logic circuits, microprocessor critical path replicas, and SRAM for 45nm and beyond
- D.-G. Park
- K. Stein
- et al.
- 2009
- VLSI-TSA 2009
Effect of ion implantation and anneals on fully-strained SiC and SiC:P films using multiple characterization techniques
- A. Madan
- J. Li
- et al.
- 2008
- ECS Meeting 2008
Recent progress and challenges in enabling embedded Si:C technology
- B. Yang
- Z. Ren
- et al.
- 2008
- ECS Meeting 2008
Channel Strain Characterization in Embedded SiGe by Nano-beam Diffraction
- J. Li
- A. Lamberti
- et al.
- 2008
- ECS Meeting 2008