RTA-driven intra-die variations in stage delay, and parametric sensitivities for 65nm technology
- I. Ahsan
- N. Zamdmer
- et al.
- 2006
- VLSI Technology 2006
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38 results for N. Zamdmer
High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell
- E. Leobandung
- H. Nayakama
- et al.
- 2005
- VLSI Technology 2005
Design and manufacturability aspect of SOI CMOS RFICs
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2004
- CICC 2004
A 243-GHz Ft and 208-GHz Fmax, 90-nm SOI CMOS SoC technology with low-power millimeter-wave digital and RF circuit capability
- Noah Zamdmer
- Jonghae Kim
- et al.
- 2004
- VLSI Technology 2004
A 31 GHz CML ring VCO with 5.4 ps delay in a 0.12-μm SOI CMOS technology
- Jean-Olivier Plouchart
- Jonghae Kim
- et al.
- 2003
- ESSCIRC 2003
A Power-Optimized Widely-Tunable 5-GHz Monolithic VCO in a Digital SOI CMOS Technology on High Resistivity Substrate
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2003
- ISLPED 2003
Analysis of the Impact of Gate-Body Signal Phase on DTMOS Inverters in 0.13μm PD-SOI
- Alan J. Drake
- Noah Zamdmer
- et al.
- 2003
- IEEE International SOI Conference 2003
3-Dimensional Vertical Parallel Plate Capacitors in an SOI CMOS Technology for Integrated RF Circuits
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2003
- VLSI Circuits 2003
A 0.123 mW 7.25 GHz static frequency divider by 8 in a 120-nm SOI technology
- J.O. Plouchart
- Jonghae Kim
- et al.
- 2003
- ISLPED 2003
A 0.123 mW 7.25 GHz Static Frequency Divider by 8 in a 120-nm SOI Technology
- Jean-Olivier Plouchart
- Jonghae Kim
- et al.
- 2003
- ISLPED 2003