Thickness effect on the crystallization kinetics of electrolessly-deposited Ni(P) thin films
- L.T. Shi
- E.J.M. O'Sullivan
- 1993
- MRS Fall Meeting 1993
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47 results for Leathen Shi
Bending of flex leads during thermal cycling
- L.T. Shi
- Ho-Ming Tong
- 1993
- MRS Fall Meeting 1993
Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics
- Cheng-Wei Cheng
- Kuen-Ting Shiu
- et al.
- 2013
- Nature Communications
High-performance 0.07-μm CMOS with 9.5-ps gate delay and 150 GHz fT
- Clement Wann
- Fariborz Assaderaghi
- et al.
- 1997
- IEEE Electron Device Letters
Computer simulation of dislocationlike motion in a lennard-jones amorphous solid
- L.T. Shi
- P. Chaudhari
- 1983
- Physical Review Letters
Induced e-beam charge impact on spatial orientation of gate-All-Around silicon wires device fabricated on boron nitride substrate
- Shimon Levi
- Konstantin Chirko
- et al.
- 2015
- SPIE Advanced Lithography 2015
CD-SEM metrology evaluation of gate-all-around Si nanowire MOSFET with improved control of nanowire suspension by using a buried boron nitride etch-stop layer
- Guy M. Cohen
- Leathen Shi
- et al.
- 2014
- ASMC 2014
FDSOI CMOS with dielectrically-isolated back gates and 30nm LG high-κ/metal gate
- Marwan Khater
- J. Cai
- et al.
- 2010
- VLSI Technology 2010
Experimental and theoretical explanation for the orientation dependence gate-induced drain leakage in scaled MOSFETs
- P. Solomon
- S.E. Laux
- et al.
- 2009
- DRC 2009
FDSOI CMOS with dual backgate control for performance and power modulation
- Jeng-Bang Yau
- Jin Cai
- et al.
- 2009
- VLSI-TSA 2009