R.W. Gammon, E. Courtens, et al.
Physical Review B
A tensile-strained Si layer was transferred to form an ultra-thin (<20 nm) strained Si directly on insulator (SSDOI) structure. MOSFETs were fabricated, and for the first time, electron and hole mobility enhancements were demonstrated on strained Si directly on insulator structures with no SiGe layer present under the strained Si channel.
R.W. Gammon, E. Courtens, et al.
Physical Review B
Z. Ren, M.V. Fischetti, et al.
IEDM 2003
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter