Extremely high transconductance Ge/Si0.4Ge0.6 p-MODFET's grown by UHV-CVD
- S.J. Koester
- R. Hammond
- et al.
- 2000
- IEEE Electron Device Letters
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100 results for Steven J. Koester
p-Type SiGe transistors with low gate leakage using SiN gate dielectric
- W. Lu
- X.W. Wang
- et al.
- 1999
- IEEE Electron Device Letters
Operation of a novel negative differential conductance transistor fabricated in a strained Si quantum well
- S.J. Koester
- K. Ismail
- et al.
- 1997
- IEEE Electron Device Letters
Germanium-on-insulator photodetectors
- S.J. Koester
- G. Dehlinger
- et al.
- 2005
- GFP 2005
FDSOI radiation dosimeters
- Jeng-Bang Yau
- Michael S. Gordon
- et al.
- 2011
- VLSI-TSA 2011
Geometry dependent tunnel FET performance - Dilemma of electrostatics vs. quantum confinement
- Yeqing Lu
- Alan C. Seabaugh
- et al.
- 2010
- DRC 2010
Are Si/SiGe tunneling field-effect transistors a good idea?
- Steven J. Koester
- Isaac Lauer
- et al.
- 2010
- ECS Transactions
FDSOI CMOS with dual backgate control for performance and power modulation
- Jeng-Bang Yau
- Jin Cai
- et al.
- 2009
- VLSI-TSA 2009
Radiation effects in SiGe p-MODFETs grown on Silicon-on-Sapphire substrates
- Anuj Madan
- Jiong Jiong Mo
- et al.
- 2009
- RADECS 2009
High mobility III-V channel MOSFETs for post-Si CMOS applications
- Yanning Sun
- E.W. Kiewra
- et al.
- 2009
- ICICDT 2009