Towards implementation of a nickel silicide process for CMOS technologies
- C. Lavoie
- F.M. D'Heurle
- et al.
- 2003
- Microelectronic Engineering
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162 results for Cyril Cabral
Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications
- E. Gusev
- C. Cabral Jr.
- et al.
- 2003
- Microelectronic Engineering
Thermodynamics and kinetics of room-temperature microstructural evolution in copper films
- C. Detavernier
- S.M. Rossnagel
- et al.
- 2003
- Journal of Applied Physics
Texture of Cu and dilute binary Cu-alloy films: Impact of annealing and solute content
- K. Barmak
- A. Gungor
- et al.
- 2003
- Materials Science in Semiconductor Processing
Annealing behavior of Cu and dilute Cu-alloy films: Precipitation, grain growth, and resistivity
- K. Barmak
- A. Gungor
- et al.
- 2003
- Journal of Applied Physics
Two gates are better than one
- P. Solomon
- K.W. Guarini
- et al.
- 2003
- IEEE Circuits and Devices Magazine
High-resolution x-ray diffraction for characterization and monitoring of silicon-on-insulator fabrication processes
- G.M. Cohen
- P.M. Mooney
- et al.
- 2002
- Journal of Applied Physics
Texture and resistivity of dilute binary Cu(Al), Cu(In), Cu(Ti), Cu(Nb), Cu(Ir), and Cu(W) allow thin films
- A. Gungor
- K. Barmak
- et al.
- 2002
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Performance enhancement on sub-70 nm strained silicon SOI MOSFETS on ultra-thin thermally mixed strained silicon/SiGe on insulator(TM-SGOI) substrate with raised S/D
- B.H. Lee
- A.C. Mocuta
- et al.
- 2002
- IEDM 2002
Influence of substrate temperature during sputter deposition on the subsequent formation of titanium disilicide
- A.S. Özean
- K.F. Ludwig Jr.
- et al.
- 2002
- MRS Proceedings 2002