SrHfO3 as gate dielectric for future CMOS technology
- C. Rossel
- M. Sousa
- et al.
- 2007
- Microelectronic Engineering
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71 results for Chiara Marchiori
Epitaxial germanium-on-insulator grown on (001) Si
- J.W. Seo
- Ch. Dieker
- et al.
- 2007
- Microelectronic Engineering
In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP's: effect of GaAs surface reconstruction
- D.J. Webb
- J. Fompeyrine
- et al.
- 2007
- Microelectronic Engineering
High-K dielectrics for the gate stack
- Jean-Pierre Locquet
- Chiara Marchiori
- et al.
- 2006
- Journal of Applied Physics
Field-effect transistors with SrHfQ3 as gate oxide
- C. Rossel
- B. Mereu
- et al.
- 2006
- Applied Physics Letters
Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO 2 gate dielectrics and α-Si/SiO 2 interlayers
- S.J. Koester
- E.W. Kiewra
- et al.
- 2006
- Applied Physics Letters
Solid phase epitaxy of SrTi O3 on (Ba,Sr) OSi (100): The relationship between oxygen stoichiometry and interface stability
- G.J. Norga
- C. Marchiori
- et al.
- 2006
- Journal of Applied Physics
Thermal stability of the SrTi O3 (Ba,Sr) O stacks epitaxially grown on Si
- Chiara Marchiori
- M. Sousa
- et al.
- 2006
- Applied Physics Letters
Characterization of field-effect transistors with La 2Hf 2O 7 and HfO 2 gate dielectric layers deposited by molecular-beam epitaxy
- Z.M. Rittersma
- J.C. Hooker
- et al.
- 2006
- Journal of Applied Physics
Phase of reflection high-energy electron diffraction oscillations during (Ba,Sr)O epitaxy on Si(100): A marker of Sr barrier integrity
- G.J. Norga
- C. Marchiori
- et al.
- 2005
- Applied Physics Letters