Materials and electrical characterization of physical vapor deposited Lax Lu1-x Oinf3 thin films on 300 mm silicon
- L.F. Edge
- T. Vo
- et al.
- 2011
- Applied Physics Letters
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91 results for John Bruley
Maximized benefit of LaAlO higher-κ gate dielectrics by optimizing the La/Al atomic ratio
- Hiroaki Arimura
- Stephen L. Brown
- et al.
- 2011
- IEEE Electron Device Letters
Epitaxial SrO interfacial layers for HfO2 -Si gate stack scaling
- Chiara Marchiori
- Martin M. Frank
- et al.
- 2011
- Applied Physics Letters
The impact of hole-induced electromigration on the cycling endurance of phase change memory
- M. H. Lee
- R. Cheek
- et al.
- 2010
- IEDM 2010
Effective schottky barrier lowering for contact resistivity reduction using silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- VLSI-TSA 2010
Sharp reduction of contact resistivities by effective schottky barrier lowering with silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- IEEE Electron Device Letters
Physical origins of mobility degradation in extremely scaled SiO 2 / HfO2 gate stacks with la and Al induced dipoles
- Takashi Ando
- Matt Copel
- et al.
- 2010
- Applied Physics Letters
Oxygen migration in TiO2-based higher-k gate stacks
- Sangbum Kim
- Stephen L. Brown
- et al.
- 2010
- Journal of Applied Physics
Ultimate EOT scaling (< 5Å) using Hf-based high-κ gate dielectrics and impact on carrier mobility
- Takashi Ando
- Martin M. Frank
- et al.
- 2010
- ECS Transactions
Oxygen transport in high-κ/ metal gate stacks and physical characterization by SIMS using isotope labeled oxygen
- Marinus Hopstaken
- John Bruley
- et al.
- 2010
- ECS Transactions