Physical origins of mobility degradation in extremely scaled SiO 2 / HfO2 gate stacks with la and Al induced dipoles
- Takashi Ando
- Matt Copel
- et al.
- 2010
- Applied Physics Letters
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.