Novel lithography-independent pore phase change memory
- M. Breitwisch
- T. Nirschl
- et al.
- 2007
- VLSI Technology 2007
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91 results for John Bruley
Extendibility of NiPt silicide contacts for CMOS technology demonstrated to the 22-nm node
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2007
- IEDM 2007
Evidence for segregation of Te in Ge2 Sb2 Te5 films: Effect on the "phase-change" stress
- L. Krusin-Elbaum
- C. Cabral
- et al.
- 2007
- Applied Physics Letters
Use of backscattered electron detector arrays for forming backscattered electron images in the scanning electron microscope
- Oliver C. Wells
- L. Gignac
- et al.
- 2006
- Scanning
Nitrogen interface engineering in Al 2O 3 capacitors for improved thermal stability
- P.D. Kirsch
- D.-G. Park
- et al.
- 2004
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Thermally robust dual-work function ALD-MN x MOSFETs using conventional CMOS process flow
- D.-G. Park
- Z. Luo
- et al.
- 2004
- VLSI Technology 2004
High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic-beam deposition
- S. Guha
- E. Cartier
- et al.
- 2001
- Journal of Applied Physics
Cleans for Al vias in a 0.175 μm Dual Damascene Process
- J.P. Gambino
- L. Clevenger
- et al.
- 1999
- IITC 1999
Properties of amorphous diamond films prepared by a filtered cathodic arc
- Richard Lossy
- David L. Pappas
- et al.
- 1995
- Journal of Applied Physics
Quantitative near‐edge structure analysis of diamond‐like carbon in the electron microscope using a two‐window method
- J. BRULEY
- D.B. WILLIAMS
- et al.
- 1995
- Journal of Microscopy