Physical origins of mobility degradation in extremely scaled SiO 2 / HfO2 gate stacks with la and Al induced dipoles
- Takashi Ando
- Matt Copel
- et al.
- 2010
- Applied Physics Letters
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90 results for John Bruley
Oxygen migration in TiO2-based higher-k gate stacks
- Sangbum Kim
- Stephen L. Brown
- et al.
- 2010
- Journal of Applied Physics
Scaling the MOSFET gate dielectric: From high-k to higher-k? (Invited Paper)
- Martin M. Frank
- SangBum Kim
- et al.
- 2009
- Microelectronic Engineering
Direct evidence for abrupt postcrystallization germanium precipitation in thin phase-change films of Sb-15 at. % Ge
- C. Cabral
- L. Krusin-Elbaum
- et al.
- 2008
- Applied Physics Letters
Backscattered electron imaging in the scanning electron microscope: The use of either: (A) high incident energy or (b) an array detector
- L. Gignac
- O.C. Wells
- et al.
- 2008
- Microscopy and Microanalysis
Evidence for segregation of Te in Ge2 Sb2 Te5 films: Effect on the "phase-change" stress
- L. Krusin-Elbaum
- C. Cabral
- et al.
- 2007
- Applied Physics Letters
Use of backscattered electron detector arrays for forming backscattered electron images in the scanning electron microscope
- Oliver C. Wells
- L. Gignac
- et al.
- 2006
- Scanning
Nitrogen interface engineering in Al 2O 3 capacitors for improved thermal stability
- P.D. Kirsch
- D.-G. Park
- et al.
- 2004
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic-beam deposition
- S. Guha
- E. Cartier
- et al.
- 2001
- Journal of Applied Physics
Quantitative near‐edge structure analysis of diamond‐like carbon in the electron microscope using a two‐window method
- J. BRULEY
- D.B. WILLIAMS
- et al.
- 1995
- Journal of Microscopy