Influence of surfactants in Ge and Si epitaxy on Si(001)
- M. Copel
- M.C. Reuter
- et al.
- 1990
- Physical Review B
Publications
232 results for Rudolf M. Tromp
Surface-stress-induced order in SiGe alloy films
- F. Legoues
- V.P. Kesan
- et al.
- 1990
- Physical Review Letters
Electronic states due to surface doping: Si(111)3×3B
- Efthimios Kaxiras
- K.C. Pandey
- et al.
- 1990
- Physical Review B
Mechanical stresses in (sub)monolayer epitaxial films
- A.J. Schell-Sorokin
- R.M. Tromp
- 1990
- Physical Review Letters
Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering
- Subramanian S. Iyer
- J.C. Tsang
- et al.
- 1989
- Applied Physics Letters
Spectroscopy with the scanning tunnelling microscope: A critical review
- R.M. Tromp
- 1989
- Journal of Physics Condensed Matter
Novel strain-induced defect in thin molecular-beam epitaxy layers
- F. Legoues
- M. Copel
- et al.
- 1989
- Physical Review Letters
Surfactants in epitaxial growth
- M. Copel
- M.C. Reuter
- et al.
- 1989
- Physical Review Letters
Noble-metal adsorption on Si(111): Medium-energy ion-scattering results for the Ag (3×3)R30 reconstruction
- M. Copel
- R.M. Tromp
- 1989
- Physical Review B
Structure of the Si(111)/CaF2 interface
- R.M. Tromp
- M.C. Reuter
- et al.
- 1989
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films