p-Channel Quantum-Well Heterostructure MI3 SFET
- Richard A. Kiehl
- Sandip Tiwari
- et al.
- 1988
- IEEE Electron Device Letters
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112 results for S.L. Wright
Effect of local alloy disorder on emission kinetics of deep donors (DX centers) in AlxGa1-xAs of low Al content
- P.M. Mooney
- T.N. Theis
- et al.
- 1988
- Applied Physics Letters
Band bending and interface states for metals on GaAs
- R.E. Viturro
- J.L. Shaw
- et al.
- 1988
- Applied Physics Letters
IVA-3 Surface Recombination in GaAlAs/GaAs Heterostructure Bipolar Transistors
- Sandip Tiwari
- David J. Frank
- et al.
- 1988
- IEEE T-ED
Landau-level broadening and scattering time in modulation doped GaAs/AlGaAs heterostructures
- F. Fang
- T.P. Smith III
- et al.
- 1988
- Surface Science
Electron velocity at high electric fields in AlGaAs/GaAs modulation-doped heterostructures
- W.T. Masselink
- N. Braslau
- et al.
- 1988
- Solid State Electronics
Electron mobility in p-type GaAs
- M.I. Nathan
- W.P. Dumke
- et al.
- 1988
- Applied Physics Letters
Tunneling and transverse wave vector conservation in GaAs/AlGaAs heterostructures
- John A. Lebens
- Robert H. Silsbee
- et al.
- 1987
- Applied Physics Letters
DX centers in AlGaAs p-n heterojunctions and heterojunction bipolar transistors
- M.I. Nathan
- S. Tiwari
- et al.
- 1987
- Journal of Applied Physics
Photoionization cross section of the DX center in Si-doped AlxGa1-xAs
- R. Legros
- P.M. Mooney
- et al.
- 1987
- Physical Review B