Characterization of fast relaxation during BTI stress in conventional and advanced CMOS devices with HfO2 gate stacks
- Andreas Kerber
- Kingsuk Maitra
- et al.
- 2008
- IEEE Transactions on Electron Devices
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40 results for A. Kerber
Impact of band structure on charge trapping in thin SiO 2/Al 2O 3/poly-Si gate stacks
- L. Pantisano
- L. Lucci
- et al.
- 2004
- IEEE Electron Device Letters
Charge trapping in SiO2/HfO2 gate dielectrics: Comparison between charge-pumping and pulsed ID-VG
- A. Kerber
- E. Cartier
- et al.
- 2003
- INFOS 2003
Stress induced charge trapping effects in SiO2/Al 2O3 gate stacks with TiN electrodes
- A. Kerber
- E. Cartier
- et al.
- 2003
- Journal of Applied Physics
Direct Measurement of the Inversion Charge in MOSFETs: Application to Mobility Extraction in Alternative Gate Dielectrics
- A. Kerber
- E. Cartier
- et al.
- 2003
- VLSI Technology 2003
On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices
- J. Westlinder
- T. Schram
- et al.
- 2003
- IEEE Electron Device Letters
Characterization of the VT-instability in SiO2 / HfO2 gate dielectrics
- A. Kerber
- E. Cartier
- et al.
- 2003
- IRPS 2003
Charge trapping and dielectric reliability of SiO2-Al2O3 gate stacks with TiN electrodes
- Andreas Kerber
- Eduard Cartier
- et al.
- 2003
- IEEE Transactions on Electron Devices
Characterization of the VT-instability in SIO2/HFO2 gate dielectrics
- A. Kerber
- E. Cartier
- et al.
- 2003
- IRPS 2003
Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
- A. Kerber
- E. Cartier
- et al.
- 2003
- IEEE Electron Device Letters