Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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56 results for M. Wordeman

Three-Dimensional Dynamic Random Access Memories Using Through-Silicon-Vias
- - Toshiaki Kirihata
  - John Golz
  - et al.
- 2016
- IEEE JESTCS
Wafer-level 3D integration technology
- - Steven J. Koester
  - Albert M. Young
  - et al.
- 2008
- IBM J. Res. Dev
1-GHz fully pipelined 3.7-ns address access time 8 k × 1024 embedded synchronous DRAM macro
- - Osamu Takahashi
  - Sang H. Dhong
  - et al.
- 2000
- IEEE Journal of Solid-State Circuits
A 7F² cell and bitline architecture featuring tilted array devices and penalty-free vertical BL twists for 4-Gb DRAM's
- - Heinz Hoenigschmid
  - Alexander Frey
  - et al.
- 2000
- IEEE Journal of Solid-State Circuits
A 220-mm², four- and eight-bank, 256-Mb SDRAM with single-sided stitched WL architecture
- - Toshiaki Kirihata
  - Martin Gall
  - et al.
- 1998
- IEEE Journal of Solid-State Circuits
Flexible test mode approach for 256-Mb DRAM
- - Toshiaki Kirihata
  - Hing Wong
  - et al.
- 1997
- IEEE Journal of Solid-State Circuits
Fault-tolerant designs for 256 Mb DRAM
- - Toshiaki Kirihata
  - Yohji Watanabe
  - et al.
- 1996
- IEEE Journal of Solid-State Circuits
A 286 mm² 256 Mb DRAM with ×32 both-ends DQ
- - Yohji Watanabe
  - Hing Wong
  - et al.
- 1996
- IEICE Transactions on Electronics
Fault-tolerant designs for 256 Mb DRAM
- - Toshiaki Kirihata
  - Yohji Watanabe
  - et al.
- 1996
- IEICE Transactions on Electronics
A Comprehensive Study of Hot-Carrier Instability in P- and N-Type Poly-SI Gated MOSFET’s
- - Charles C.-H. Hsu
  - Duen-Shun Wen
  - et al.
- 1994
- IEEE Transactions on Electron Devices