Low-frequency noise and radiation response of metal-oxide-semiconductor transistors with Al 2O 3/SiO xN y/Si(100) gate stacks
- H.D. Xiong
- D.M. Fleetwood
- et al.
- 2003
- Applied Physics Letters
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75 results for Christopher P. D’Emic
Device Design Considerations for Ultra-Thin SOI MOSFETs
- B. Doris
- M. Ieong
- et al.
- 2003
- IEDM 2003
Tunnel Current Measurements on P/N Junction Diodes and Implications for Future Device Design
- Paul M. Solomon
- David J. Frank
- et al.
- 2003
- IEDM 2003
Radiation-Induced Charge Trapping in Thin Al2O 3/SiOxNy/Si(100) Gate Dielectric Stacks
- J.A. Felix
- M.R. Shaneyfelt
- et al.
- 2003
- IEEE TNS
High Performance CMOS Fabricated on Hybrid Substrate with Different Crystal Orientations
- M. Yang
- M. Ieong
- et al.
- 2003
- IEDM 2003
Energy Distribution of Interface Traps in High-K Gated MOSFETs
- J.-P. Han
- E.M. Vogel
- et al.
- 2003
- VLSI Technology 2003
Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications
- E. Gusev
- C. Cabral Jr.
- et al.
- 2003
- Microelectronic Engineering
Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics
- Min Yang
- Evgeni P. Gusev
- et al.
- 2003
- IEEE Electron Device Letters
Two gates are better than one
- P. Solomon
- K.W. Guarini
- et al.
- 2003
- IEEE Circuits and Devices Magazine
A selective etching process for chemically inert high-k metal oxides
- Katherine L. Saenger
- Harald F. Okorn-Schmidt
- et al.
- 2002
- MRS Proceedings 2002