Geometry Effects in MOSFET Channel Length Extraction Algorithms
- M.R. Wordeman
- J.Y.-C. Sun
- et al.
- 1985
- IEEE Electron Device Letters
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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88 results for S.E. Laux
FEAST for complex band structure problems
- S.E. Laux
- 2012
- IWCE 2012
Orientation dependent complex bandstructure of Si1-xGe x alloys
- Arvind Ajoy
- Kota V. R. M. Murali
- et al.
- 2011
- DRC 2011
Geometry dependent tunnel FET performance - Dilemma of electrostatics vs. quantum confinement
- Yeqing Lu
- Alan C. Seabaugh
- et al.
- 2010
- DRC 2010
Are Si/SiGe tunneling field-effect transistors a good idea?
- Steven J. Koester
- Isaac Lauer
- et al.
- 2010
- ECS Transactions
Experimental and theoretical explanation for the orientation dependence gate-induced drain leakage in scaled MOSFETs
- P. Solomon
- S.E. Laux
- et al.
- 2009
- DRC 2009
Computation of complex band structures in bulk and confined structures
- S.E. Laux
- 2009
- IWCE 2009
Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source
- M.V. Fischetti
- S. Jin
- et al.
- 2009
- IWCE 2009
Measurements of carrier transport in MOSFETs with bottom-up nanowire channel as a function of the nanowire diameter
- G.M. Cohen
- S. Bangsaruntip
- et al.
- 2008
- DRC 2008
An n-FET with a Si nanowire channel and doped epitaxially-thickened source and drain regions
- G.M. Cohen
- P. Solomon
- et al.
- 2007
- DRC 2007