Understanding hot-electron transport in silicon devices: Is there a shortcut?
- M.V. Fischetti
- S.E. Laux
- et al.
- 1995
- Journal of Applied Physics
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88 results for S.E. Laux
Effect of nonequilibrium deep donors in heterostructure modeling
- Arvind Kumar
- Steven E. Laux
- et al.
- 1993
- Physical Review B
Monte Carlo study of electron transport in silicon inversion layers
- M.V. Fischetti
- S.E. Laux
- 1993
- Physical Review B
IIA-7 Monte Carlo Simulations of p-and n-Channel Dual-Gate Si MOSFET's at the Limits of Scaling
- D.J. Frank
- S.E. Laux
- et al.
- 1993
- IEEE Transactions on Electron Devices
Charge transfer and low-temperature electron mobility in a strained Si layer in relaxed Si1-xGex
- Frank Stern
- Steven E. Laux
- 1992
- Applied Physics Letters
Carriers induced at the end of a quantum well
- Frank Stern
- Steven E. Laux
- 1992
- Journal of Applied Physics
Monte Carlo Simulation of Transport in Technologically Significant Semiconductors of the Diamond and Zinc-Blende Structures—Part II: Submicrometer MOSFET's
- Massimo V. Fischetti
- Steven E. Laux
- 1991
- IEEE T-ED
Electron states in a GaAs quantum dot in a magnetic field
- Arvind Kumar
- Steven E. Laux
- et al.
- 1990
- Physical Review B
Gated, asymmetric rings as tunable electron interferometers
- C.J.B. Ford
- A.B. Fowler
- et al.
- 1990
- Surface Science
The use of simulation in semiconductor technology development
- D.C. Cole
- E.M. Buturla
- et al.
- 1990
- Solid State Electronics