Evaluation of (110) versus (001) Channel Orientation for Improved nFET/pFET Device Performance Trade-Off in Gate-All-Around Nanosheet Technology
- Shogo Mochizuki
- Nicolas Loubet
- et al.
- 2023
- IEDM 2023
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32 results for Shogo Mochizuki
Contact Cavity Shaping and Selective SiGe:B Low-Temperature Epitaxy Process Solution for sub 10-9 Ω.cm2 Contact Resistivity in Nonplanar FETs
- N. Breil
- B.-C. Lee
- et al.
- 2023
- VLSI Technology 2023
Improving FinFET Junctions and Contacts via Laser Annealing
- Oleg Gluschenkov
- Yasir Sulehria
- et al.
- 2023
- IWJT 2023
Precession Electron Diffraction (PED) Strain Characterization in Stacked Nanosheet FET Structure
- Juntao Li
- Shogo Mochizuki
- et al.
- 2022
- ISTFA 2022
Vertical-Transport Nanosheet Technology for CMOS Scaling beyond Lateral-Transport Devices
- H. Jagannathan
- B. Anderson
- et al.
- 2021
- IEDM 2021
Stacked Gate-All-Around Nanosheet pFET with Highly Compressive Strained Si1-xGex Channel
- Shogo Mochizuki
- M. Bhuiyan
- et al.
- 2020
- IEDM 2020
Parasitic Resistance Reduction for Aggressively Scaled Stacked Nanosheet Transistors
- Su-Chen Fan
- Ruilong Xie
- et al.
- 2020
- IITC 2020
Structural and Electrical Demonstration of SiGe Cladded Channel for PMOS Stacked Nanosheet Gate-All-Around Devices
- Shogo Mochizuki
- B. Colombeau
- et al.
- 2020
- VLSI Technology 2020
NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2020
- IRPS 2020
SiGe Channel CMOS: Understanding Dielectric Breakdown and Bias Temperature Instability Tradeoffs
- Richard G. Southwick
- Miaomiao Wang
- et al.
- 2019
- VLSI Technology 2019