Evaluation of (110) versus (001) Channel Orientation for Improved nFET/pFET Device Performance Trade-Off in Gate-All-Around Nanosheet Technology
- Shogo Mochizuki
- Nicolas Loubet
- et al.
- 2023
- IEDM 2023
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32 results for Shogo Mochizuki
Contact Cavity Shaping and Selective SiGe:B Low-Temperature Epitaxy Process Solution for sub 10-9 Ω.cm2 Contact Resistivity in Nonplanar FETs
- N. Breil
- B.-C. Lee
- et al.
- 2023
- VLSI Technology 2023
Vertical-Transport Nanosheet Technology for CMOS Scaling beyond Lateral-Transport Devices
- H. Jagannathan
- B. Anderson
- et al.
- 2021
- IEDM 2021
Stacked Gate-All-Around Nanosheet pFET with Highly Compressive Strained Si1-xGex Channel
- Shogo Mochizuki
- M. Bhuiyan
- et al.
- 2020
- IEDM 2020
Advanced Arsenic Doped Epitaxial Growth for Source Drain Extension Formation in Scaled FinFET Devices
- Shogo Mochizuki
- B. Colombeau
- et al.
- 2018
- IEDM 2018
Parasitic Resistance Reduction Strategies for Advanced CMOS FinFETs beyond 7nm
- Heng Wu
- Oleg Gluschenkov
- et al.
- 2018
- IEDM 2018
Toward High Performance SiGe Channel CMOS: Design of High Electron Mobility in SiGe nFinFETs Outperforming Si
- Choonghyun Lee
- Richard G. Southwick
- et al.
- 2018
- IEDM 2018
A comparative study of strain and Ge content in Si1-xGex channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs
- Choonghyun Lee
- Shogo Mochizuki
- et al.
- 2017
- IEDM 2017
Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT
- G. Tsutsui
- Ruqiang Bao
- et al.
- 2016
- IEDM 2016
FinFET performance with Si:P and Ge:Group-III-Metal metastable contact trench alloys
- Oleg Gluschenkov
- Zuoguang Liu
- et al.
- 2016
- IEDM 2016