Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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32 results for Shogo Mochizuki

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- - Ruilong Xie
  - Pietro Montanini
  - et al.
- 2016
- IEDM 2016
Sub-10^-9 Ω-cm² n-Type Contact Resistivity for FinFET Technology
- - Hiroaki Niimi
  - Zuoguang Liu
  - et al.
- 2016
- IEEE Electron Device Letters
Improving FinFET Junctions and Contacts via Laser Annealing
- - Oleg Gluschenkov
  - Yasir Sulehria
  - et al.
- 2023
- IWJT 2023
Precession Electron Diffraction (PED) Strain Characterization in Stacked Nanosheet FET Structure
- - Juntao Li
  - Shogo Mochizuki
  - et al.
- 2022
- ISTFA 2022
Parasitic Resistance Reduction for Aggressively Scaled Stacked Nanosheet Transistors
- - Su-Chen Fan
  - Ruilong Xie
  - et al.
- 2020
- IITC 2020
Structural and Electrical Demonstration of SiGe Cladded Channel for PMOS Stacked Nanosheet Gate-All-Around Devices
- - Shogo Mochizuki
  - B. Colombeau
  - et al.
- 2020
- VLSI Technology 2020
NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor
- - Huimei Zhou
  - Miaomiao Wang
  - et al.
- 2020
- IRPS 2020
Channel Strain Dependence of Tinv in Strained Si and Si_l-xGe_xFETs: Internal Strain-induced Modification of Chemical Oxidation
- - Choonghyun Lee
  - Shogo Mochizuki
  - et al.
- 2019
- VLSI Technology 2019
SiGe Channel CMOS: Understanding Dielectric Breakdown and Bias Temperature Instability Tradeoffs
- - Richard G. Southwick
  - Miaomiao Wang
  - et al.
- 2019
- VLSI Technology 2019
Leakage aware Si/SiGe CMOS FinFET for low power applications
- - G. Tsutsui
  - C. Durfee
  - et al.
- 2018
- VLSI Technology 2018