SiGe Channel CMOS: Understanding Dielectric Breakdown and Bias Temperature Instability Tradeoffs
- Richard G. Southwick
- Miaomiao Wang
- et al.
- 2019
- VLSI Technology 2019
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32 results for Shogo Mochizuki
Strain engineering in functional materials
- G. Tsutsui
- Shogo Mochizuki
- et al.
- 2019
- AIP Advances
Parasitic Resistance Reduction Strategies for Advanced CMOS FinFETs beyond 7nm
- Heng Wu
- Oleg Gluschenkov
- et al.
- 2018
- IEDM 2018
Advanced Arsenic Doped Epitaxial Growth for Source Drain Extension Formation in Scaled FinFET Devices
- Shogo Mochizuki
- B. Colombeau
- et al.
- 2018
- IEDM 2018
Toward High Performance SiGe Channel CMOS: Design of High Electron Mobility in SiGe nFinFETs Outperforming Si
- Choonghyun Lee
- Richard G. Southwick
- et al.
- 2018
- IEDM 2018
Leakage aware Si/SiGe CMOS FinFET for low power applications
- G. Tsutsui
- C. Durfee
- et al.
- 2018
- VLSI Technology 2018
A comparative study of strain and Ge content in Si1-xGex channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs
- Choonghyun Lee
- Shogo Mochizuki
- et al.
- 2017
- IEDM 2017
Quantification of local strain distributions in nanoscale strained SiGe FinFET structures
- Shogo Mochizuki
- Conal E. Murray
- et al.
- 2017
- Journal of Applied Physics
Understanding the interfacial layer formation on strained Si1-xGex channels and their correlation to inversion layer hole mobility
- Choonghyun Lee
- Richard G. Southwick
- et al.
- 2017
- VLSI Technology 2017
Dual beam laser annealing for contact resistance reduction and its impact on VLSI integrated circuit variability
- Zuoguang Liu
- Oleg Gluschenkov
- et al.
- 2017
- VLSI Technology 2017