A four-FET method for extracting mobility in FETs without field oxide
- Amlan Majumdar
- Ko-Tao Lee
- et al.
- 2014
- IEEE T-ED
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63 results for Effendi Leobandung
CMOS-Compatible self-aligned In0.53Ga0.47As MOSFETs with gate lengths down to 30 nm
- Amlan Majumdar
- Yanning Sun
- et al.
- 2014
- IEEE T-ED
Experimental study of gate-first finfet threshold-voltage mismatch
- Qintao Zhang
- Cindy Wang
- et al.
- 2014
- IEEE T-ED