Selection of attenuated phase shift mask compatible contact hole resists for KrF optical lithography
- Zhijian G. Lu
- Yuping Cui
- et al.
- 1999
- SPIE Advances in Resist Technology and Processing 1999
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18 results for Alan Thomas
Evaluation of X-ray lithography using a 0.175 μm (0.245 μm2 cell area) 1 Gb DRAM technology
- Rosemary Longo
- S. Chaloux
- et al.
- 1998
- VLSI Technology 1998
0.21 μm2 7F2 trench cell with a locally-open globally-folded dual bitline for 1 Gb/4 Gb DRAM
- C. Radens
- U. Gruening
- et al.
- 1998
- VLSI Technology 1998
Competitive and cost effective copper/low-k interconnect (BEOL) for 28 nm CMOS technologies
- R. Augur
- C. Child
- et al.
- 2012
- Microelectronic Engineering
Tunable anti-reflective coatings with built-in hard mask properties facilitating thin resist processing
- Arpan P. Mahorowala
- Katherina Babich
- et al.
- 2001
- Proceedings of SPIE - The International Society for Optical Engineering
When is bilayer thin-film imaging suitable: Comparison with single layer resists
- Scott Halle
- Alan Thomas
- et al.
- 2001
- Proceedings of SPIE - The International Society for Optical Engineering
Advanced lithography kits: Serifs and hammerhead
- Hang-Yip Liu
- Steffen Schulze
- et al.
- 2000
- Proceedings of SPIE - The International Society for Optical Engineering
Level-specific lithography optimization for 1-Gb DRAM
- Alfred K. Wong
- Richard Ferguson
- et al.
- 2000
- IEEE Trans Semicond Manuf