GALLIUM ARSENIDE BALLISTIC TRANSISTOR?
- M.I. Nathan
- M. Heiblum
- 1986
- IEEE Spectrum
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72 results for Marshall I. Nathan
Persistent photoconductivity in AlGaAs/GaAs modulation doped layers and field effect transistors: A review
- Marshall I. Nathan
- 1986
- Solid-State Electronics
Direct observation of ballistic transport in GaAs
- M. Heiblum
- M.I. Nathan
- et al.
- 1985
- Physical Review Letters
Energy band discontinuities in heterojunctions measured by internal photoemission
- M. Heiblum
- M.I. Nathan
- et al.
- 1985
- Applied Physics Letters
VA-1 Measuring Barrier Heights in GaAs-AlGaAs and Metal-AlGaAs Junctions by Internal Photoemission
- M. Heiblum
- M.I. Nathan
- et al.
- 1985
- IEEE T-ED
Room-temperature electron trapping in Al0.35Ga 0.65As/GaAs modulation-doped field-effect transistors
- Marshall I. Nathan
- P.M. Mooney
- et al.
- 1985
- Applied Physics Letters
Tunneling hot-electron transfer amplifier: A hot-electron GaAs device with current gain
- M. Heiblum
- D.C. Thomas
- et al.
- 1985
- Applied Physics Letters
The structural dependence of light sensitivity in (Al,Ga)As/GaAs modulation doped heterostructures
- J. Klem
- T.J. Drummond
- et al.
- 1984
- Journal of Electronic Materials
Persistent photo-conductance and photoquenching of selectively doped Al0.3Ga0.7As GaAs/heterojunctions
- M.I. Nathan
- T.N. Jackson
- et al.
- 1983
- Journal of Electronic Materials
PERSISTENT PHOTOCONDUCTIVITY IN AlGaAs-GaAs HETEROSTRUCTURES.
- M.I. Nathan
- M. Heiblum
- et al.
- 1983
- Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena