Study of silicon contamination and near-surface damage caused by CF 4/H2 reactive ion etching
- G.S. Oehrlein
- R.M. Tromp
- et al.
- 1984
- Applied Physics Letters
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117 results for Gottlieb S. Oehrlein
Diffusion of phosphorus during rapid thermal annealing of ion-implanted silicon
- G.S. Oehrlein
- S. Cohen
- et al.
- 1984
- Applied Physics Letters
Some properties of crystallized tantalum pentoxide thin films on silicon
- G.S. Oehrlein
- F.M. D'Heurle
- et al.
- 1984
- Journal of Applied Physics
On the Complex of the Oxygen Interstitial and the Silicon Interstitial in Silicon
- J.L. Lindstrom
- B.C. Svensson
- et al.
- 1984
- physica status solidi (a)
Silicon-oxygen complexes containing three oxygen atoms as the dominant thermal donor species in heat-treated oxygen-containing silicon
- G.S. Oehrlein
- 1983
- Journal of Applied Physics
Electrical properties of amorphous tantalum pentoxide thin films on silicon
- G.S. Oehrlein
- A. Reisman
- 1983
- Journal of Applied Physics
Models for the Hydrogen‐Related Defect—Impurity Complexes and SiH Infrared Bands in Crystalline Silicon
- T.S. Shi
- S.N. Sahu
- et al.
- 1982
- physica status solidi (a)