Photoluminescence characterization of plasma exposed silicon surfaces
- A. Henry
- B. Monemar
- et al.
- 1991
- Journal of Applied Physics
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118 results for Gottlieb S. Oehrlein
Reactive ion etching of SiGe alloys using HBr
- Tim D. Bestwick
- Gottlieb S. Oehrlein
- et al.
- 1991
- Applied Physics Letters
Nonintrusive wafer temperature measurement using in situ ellipsometry
- G.M.W. Kroesen
- G.S. Oehrlein
- et al.
- 1991
- Journal of Applied Physics
Grazing angle optical emission interferometry for end-point detection
- David Angell
- Gottlieb S. Oehrlein
- 1991
- Applied Physics Letters
Interactive effects in the reactive ion etching of SiGe alloys
- G.S. Oehrlein
- Y. Zhang
- et al.
- 1991
- Applied Physics Letters
High hydrogen concentrations produced by segregation into p+ layers in silicon
- A.D. Marwick
- G.S. Oehrlein
- et al.
- 1991
- Applied Physics Letters
Selective dry etching of silicon with respect to germanium
- G.S. Oehrlein
- T.D. Bestwick
- et al.
- 1990
- Applied Physics Letters
X-ray photoemission and Raman scattering spectroscopic study of surface modifications of silicon induced by electron cyclotron resonance etching
- A.S. Yapsir
- G.S. Oehrlein
- et al.
- 1990
- Applied Physics Letters
Cryogenic reactive ion etching of silicon in SF6
- Tim D. Bestwick
- Gottlieb S. Oehrlein
- et al.
- 1990
- Applied Physics Letters
Reactive-ion- and plasma-etching-induced extended defects in silicon studied with photoluminescence
- H. Weman
- J.L. Lindström
- et al.
- 1990
- Journal of Applied Physics