Reactive ion etching of SiGe alloys using CF2Cl2
- Ying Zhang
- Gottlieb S. Oehrlein
- et al.
- 1992
- Journal of Applied Physics
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117 results for Gottlieb S. Oehrlein
Refractive index determination of SiGe using reactive ion etching/ellipsometry: Application of the depth profiling of the GE concentration
- G.M.W. Kroesen
- G.S. Oehrlein
- et al.
- 1992
- Applied Physics Letters
Ion-induced fluorination in electron cyclotron resonance etching of silicon studied by x-ray photoelectron spectroscopy
- David Vender
- Marco Haverlag
- et al.
- 1992
- Applied Physics Letters
Etching of silicon in low-pressure plasmas containing fluorine and oxygen: A comparison of real-time and postplasma surface studies
- Gottlieb S. Oehrlein
- Gerrit M.W. Kroesen
- et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Noninvasive picosecond ultrasonic detection of ultrathin interfacial layers: CFx at the Al/Si interface
- G. Tas
- R.J. Stoner
- et al.
- 1992
- Applied Physics Letters
Ellipsometric study of silicon surface damage in electron cyclotron resonance plasma etching using CF4 and SF6
- M. Haverlag
- D. Vender
- et al.
- 1992
- Applied Physics Letters
Interactive effects in the reactive ion etching of SiGe alloys
- G.S. Oehrlein
- Y. Zhang
- et al.
- 1991
- Applied Physics Letters
Reactive ion etching of SiGe alloys using HBr
- Tim D. Bestwick
- Gottlieb S. Oehrlein
- et al.
- 1991
- Applied Physics Letters
High hydrogen concentrations produced by segregation into p+ layers in silicon
- A.D. Marwick
- G.S. Oehrlein
- et al.
- 1991
- Applied Physics Letters
Nonintrusive wafer temperature measurement using in situ ellipsometry
- G.M.W. Kroesen
- G.S. Oehrlein
- et al.
- 1991
- Journal of Applied Physics