Fluorination of the silicon dioxide surface during reactive ion and plasma etching in halocarbon plasmas
- S.W. Robey
- G.S. Oehrlein
- 1989
- Surface Science
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118 results for Gottlieb S. Oehrlein
Surface analysis of realistic semiconductor microstructures
- Gottlieb S. Oehrlein
- Kevin K. Chan
- et al.
- 1989
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Photoluminescence of defects introduced by deuterium plasmas in silicon
- H. Weman
- J.L. Lindström
- et al.
- 1989
- Materials Science and Engineering B
Competitive reactions of fluorine and oxygen with W, WSi2, and Si surfaces in reactive ion etching using CF4/O2
- Gottlieb S. Oehrlein
- J. Lennart Lindsöm
- 1989
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Dry etching damage of silicon: A review
- Gottlieb S. Oehrlein
- 1989
- Materials Science and Engineering B
Tungsten etching mechanisms in CF4/O2 reactive ion etching plasmas
- Tim D. Bestwick
- Gottlieb S. Oehrlein
- 1989
- Journal of Applied Physics
Electrical studies on plasma and reactive-ion-etched silicon
- A. Henry
- O.O. Awadelkarim
- et al.
- 1989
- Journal of Applied Physics
Effects of deuterium plasma treatments on the electrical properties of boron-doped silicon
- A. Henry
- O.O. Awadelkarim
- et al.
- 1989
- Materials Science and Engineering B
In situ spatially resolved surface characterization of realistic semiconductor structure after reactive ion etching process
- Gottlieb S. Oehrlein
- Kevin K. Chan
- et al.
- 1988
- Journal of Applied Physics
Efficiency of oxygen plasma cleaning of reactive ion damaged silicon surfaces
- Gottlieb S. Oehrlein
- Gerald J. Scilla
- et al.
- 1988
- Applied Physics Letters