193-nm single-layer positive resists: building etch resistance into a high-resolution imaging system
- R.D. Allen
- G.M. Wallraff
- et al.
- 1995
- Microlithography 1995
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46 results for Richard Dipietro
Smectic liquid crystals modified by tail and core fluorination
- R.J. Twieg
- K. Betterton
- et al.
- 1991
- IS&T/SPIE Electronic Imaging 1991
Fundamental properties of fluoroalcohol-methacrylate polymers for use in 193nm lithography
- R.D. Allen
- G. Breyta
- et al.
- 2006
- J. Photopolym. Sci. Tech.
Fluoropolymer resists: Progress and properties
- Hiroshi Ito
- H.D. Truong
- et al.
- 2003
- J. Photopolym. Sci. Tech.
Platform-dependent properties of 193nm single layer resists
- Robert D. Allen
- Thomas I. Wallow
- et al.
- 1998
- J. Photopolym. Sci. Tech.
Etch selectivity of 4SiMA: Hydroxystyrene based copolymers. silicon chemistry for bilayer resist systems
- G.M. Wallraff
- Carl E. Larson
- et al.
- 1998
- J. Photopolym. Sci. Tech.
The influence of photoacid structure on the design and performance of 193-nm resists
- Robert D. Allen
- Juliann Opitz
- et al.
- 1997
- J. Photopolym. Sci. Tech.
193 nm photoresist r&d: the risk & challenge
- Donald C. Hofer
- Robert Allen
- et al.
- 1996
- J. Photopolym. Sci. Tech.
Lithographic feasibility of escap beyond quarter micron
- Hiroshi Ito
- Greg Breyta
- et al.
- 1996
- J. Photopolym. Sci. Tech.
Resolution and etch resistance of a family of 193 nm positive resists
- R.D. Allen
- I.Y. Wan
- et al.
- 1995
- J. Photopolym. Sci. Tech.