193 nm positive tone bilayer resist based on norbornene-maleic anhydride copolymers

A 193-nm bilayer resist was developed based on alternating copolymers of silicon-substituted norbornene monomers and maleic anhydride. An optimized resist formulation with high resolution and contrast was obtained. The resist had 70 nm 1 features with an alternating phase shift mask. Preliminary oxygen reactive ion etching transfer results are presented.