LeGoues, Mooney, and Tersoff reply [2]
- F.K. LeGoues
- P.M. Mooney
- et al.
- 1994
- Physical Review Letters
Publications
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119 results for P.M. Mooney
Measurement of the activation barrier to nucleation of dislocations in thin films
- F.K. LeGoues
- P.M. Mooney
- et al.
- 1993
- Physical Review Letters
Electron localization by a metastable donor level in n-GaAs: A new mechanism limiting the free-carrier density
- T.N. Theis
- P.M. Mooney
- et al.
- 1988
- Physical Review Letters
Applications of synchrotron X-rays in microelectronics industry research
- Jean L. Jordan-Sweet
- Christophe Detavernier
- et al.
- 2005
- Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Fabrication, device design and mobility enhancement of germanium channel MOSFETs
- Huiling Shang
- E. Gousev
- et al.
- 2004
- ICSICT 2004
Channel design and mobility enhancement in strained germanium buried channel MOSFETs
- H. Shang
- J.O. Chu
- et al.
- 2004
- VLSI Technology 2004
Influence of He implantation conditions on strain relaxation and threading dislocation density in Si0.8Ge0.2 virtual substrates
- J. Cai
- P.M. Mooney
- et al.
- 2004
- MRS Proceedings 2004
Strained Si-on-insulator fabricated from elastically-relaxed Si/SiGe structures
- P.M. Mooney
- G.M. Cohen
- et al.
- 2004
- MRS Proceedings 2004
Probing strain fields about thin film structures using x-ray microdiffraction
- C.E. Murray
- I.C. Noyan
- et al.
- 2003
- MRS Proceedings 2003
Free standing silicon as a compliant substrate for SiGe
- G.M. Cohen
- P.M. Mooney
- et al.
- 2003
- MRS Proceedings 2003