Strain relaxation and threading dislocation density in helium-implanted and annealed Si 1-xGe x/Si( 100) heterostructuresJ. CaiP.M. Mooneyet al.2004Journal of Applied Physics
Coulomb blockade in a silicon/silicon-germanium two-dimensional electron gas quantum dotL.J. KleinK.A. Slinkeret al.2004Applied Physics Letters
Influence of He implantation conditions on strain relaxation and threading dislocation density in Si0.8Ge0.2 virtual substratesJ. CaiP.M. Mooneyet al.2004MRS Proceedings 2004
Strained Si-on-insulator fabricated from elastically-relaxed Si/SiGe structuresP.M. MooneyG.M. Cohenet al.2004MRS Proceedings 2004
Elastic strain relaxation in free-standing SiGe/Si structuresP.M. MooneyG.M. Cohenet al.2004Applied Physics Letters
Probing strain fields about thin film structures using x-ray microdiffractionC.E. MurrayI.C. Noyanet al.2003MRS Proceedings 2003
High Performance CMOS Fabricated on Hybrid Substrate with Different Crystal OrientationsM. YangM. Ieonget al.2003IEDM 2003
Mapping of strain fields about thin film structures using x-ray microdiffractionC.E. MurrayI.C. Noyanet al.2003Applied Physics Letters
Free standing silicon as a compliant substrate for SiGeG.M. CohenP.M. Mooneyet al.2003MRS Proceedings 2003
Free standing silicon as a compliant substrate for SiGeG.M. CohenP.M. Mooneyet al.2003MRS Proceedings 2003