High speed, lateral PIN photodiodes in silicon technologies
- Jeremy D. Schaub
- Steven J. Koester
- et al.
- 2004
- SPIE IOPTO 2004
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36 results for Q. Ouyang
High-performance SiGe MODFET technology
- S.J. Koester
- J.O. Chu
- et al.
- 2004
- MRS Proceedings 2004
Vertical SiGe-base bipolar transistors on CMOS-compatible SOI substrate
- Jin Cai
- Mahender Kumar
- et al.
- 2003
- BCTM 2003
Implications of gate design on RF performance of sub-100 nm strained-Si/SiGe nMODFETs
- Q. Ouyang
- S.J. Koester
- et al.
- 2003
- SISPAD 2003
High speed lateral trench detectors with a junction substrate
- Qiqing Ouyang
- J. Schaub
- 2003
- Device Research Conference 2003
A simulation study on thin SOI bipolar transistors with fully or partially depleted collector
- Qiqing Ouyang
- Jin Cai
- et al.
- 2002
- BCTM 2002
A comprehensive simulation study of strained-Si/SiGe nMODFET scaling for RF applications
- Qiqing Christine Ouyang
- S.J. Koester
- et al.
- 2002
- SISPAD 2002
Performance enhancement in vertical sub-100 nm nMOSFETs with graded doped channels
- Q. Ouyang
- X. Chen
- et al.
- 2002
- ICCDCS 2002
Fabrication of a novel vertical pMOSFET with enhanced drive current and reduced short-channel effects and floating body effects
- Q. Ouyang
- X. Chen
- et al.
- 2001
- VLSI Technology 2001
High-speed Germanium-on-SOI lateral PIN photodiodes
- G. Dehlinger
- S.J. Koester
- et al.
- 2004
- IEEE Photonics Technology Letters