High performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithography
- S. Narasimha
- K. Onishi
- et al.
- 2006
- IEDM 2006
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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12 results for A. Vayshenker
65nm CMOS technology for low power applications
- A. Steegen
- R. Mo
- et al.
- 2005
- IEDM 2005
High performance and low power transistors integrated in 65nm bulk CMOS technology
- Z. Luo
- A. Steegen
- et al.
- 2004
- IEDM 2004
A high performance 90 nm SOI technology with 0.992 μm2 6T-SRAM cell
- Mukesh Khare
- S. Ku
- et al.
- 2002
- IEDM 2002
Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics
- Barry P. Linder
- Salvatore Lombardo
- et al.
- 2002
- IEEE Electron Device Letters
The effect of change of voltage acceleration on temperature activation of oxide breakdown for ultrathin oxides
- E. Wu
- J.M. McKenna
- et al.
- 2001
- IEEE Electron Device Letters
Impact of charge trapping on the voltage acceleration of TDDB in metal gate/high-k n-channel MOSFETs
- A. Kerber
- A. Vayshenker
- et al.
- 2010
- IRPS 2010
High-performance high-κ/metal gates for 45nm CMOS and beyond with gate-first processing
- M. Chudzik
- B. Doris
- et al.
- 2007
- VLSI Technology 2007
High performance transistors featured in an aggressively scaled 45nm bulk CMOS technology
- Z. Luo
- N. Rovedo
- et al.
- 2007
- VLSI Technology 2007
Growth and scaling of oxide conduction after breakdown
- Barry P. Linder
- James H. Stathis
- et al.
- 2003
- IRPS 2003